Abstract: Over the past decades, the metal-oxide-based semiconductors have become increasing prominent materials due to their inherent advantages including wide bandgap energy, large exciton binding energy, high radiation hardness, and compatibility with conventional fabrication processes. Although several methods were utilized to deposit various metal-oxide-based materials onto different substrates for fabricating devices, the novel vapor cooling condensation method was successfully demonstrated previously [1][2]. The metal-oxide-based materials and thin films deposited on various substrates at liquid-nitrogen temperatures using the vapor cooling condensation method are studied. The related properties are also demonstrated. Besides, the performances of the associated devices manufactured using those materials and thin films are reported in this work.

Keywords: Metal-oxide materials and devices, Vapor cooling condensation system

References:
[1]. H. Y. Lee, S. D. Xia, W. P. Zhang, L. R. Lou, J. T. Yan, and C. T. Lee, “Mechanisms of high quality i-ZnO thin films deposition at low temperature by vapor cooling condensation technique”, J. Appl. Phys., vol. 108, 073119 (2010).
[2]. T. S. Lin and C. T. Lee, “Performance investigation of p-i-n ZnO-based thin film homojunction ultraviolet photodetectors”, Appl. Phys. Lett., vol. 101, 221118, (2012).

Acknowledgements: This work was supported by the National Science and Technology Council (NSTC), under No. NSTC 113-2221-E-006-106-MY3 and NSTC 114-2221-E-006-200-MY3.